Tungsten is widely used as deposited layer for the multi-level interconnection structures of wafers. The chemical composition of abrasive slurry plays an important role in chemical mechanical polishing (CMP) process. Removal of tungsten is driven by complex oxidation mechanisms between slurry components. The slurry for tungsten CMP generally contains oxidizer, iron catalyst, complexing agents and stabilizers in a pH adjusted solution of abrasive particles. Interaction between iron complex and H2O2 in the slurry is the main factor governing the chemical mode of material removal, oxidation potencies and kinetics. In this study, we investigate the effects of chemical additives in silica (SiO2)-based slurry on the removal rate of the tungsten film. Experiments were carried out in static batch as a preliminary study to understand and optimize chemical mechanisms in CMP-Tungsten process. Experiment designs were conducted to understand the influence of the chemical additives on the main performances of W-CMP. Used slurry, concentrated and retreated with chemical adjustments, is compared to the original slurry as a reference.